Inchange Semiconductor Product Specification 2SD1975 2SD1975A Silicon NPN Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type 2SB1317/1317A ·Wide area of safe operation ·High transition frequency fT APPLICATIONS ·For high power amplification ·Optimum for the output stage of a Hi-Fi audio amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PL) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SD1975 VCBO Collector-base voltage 180 Open base 2SD1975A VEBO Emitter-base voltage V 200 2SD1975 Collector-emitter voltage UNIT 180 Open emitter 2SD1975A VCEO VALUE V 200 Open collector 5 V IC Collector current 15 A ICM Collector current-peak 25 A PC Collector power dissipation Ta=25℃ 3.5 TC=25℃ 150 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1975 2SD1975A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBE Emitter-base voltage ICBO Collector cut-off current 2SD1975 2SD1975A MIN TYP. MAX UNIT IC=10A ;IB=1A 2.5 V IC=8A ; VCE=5V 1.8 V 50 μA 50 μA VCB=180V; IE=0 VCB=200V; IE=0 IEBO Emitter cut-off current VEB=3V; IC=0 hFE-1 DC current gain IC=20mA ; VCE=5V 20 hFE-2 DC current gain IC=1A ; VCE=5V 60 hFE-3 DC current gain IC=8A ; VCE=5V 20 Transition frequency IC=0.5A ; VCE=5V 20 MHz Collector output capacitance f=1MHz;VCB=10V 200 pF fT COB CONDITIONS hFE-2 classifications Q S P 60-120 80-160 100-200 2 200 Inchange Semiconductor Product Specification 2SD1975 2SD1975A Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm) 3 Inchange Semiconductor Product Specification 2SD1975 2SD1975A Silicon NPN Power Transistors 4