ISC 2SD1975A

Inchange Semiconductor
Product Specification
2SD1975 2SD1975A
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PL package
·Complement to type 2SB1317/1317A
·Wide area of safe operation
·High transition frequency fT
APPLICATIONS
·For high power amplification
·Optimum for the output stage of a
Hi-Fi audio amplifier
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PL) and symbol
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
2SD1975
VCBO
Collector-base voltage
180
Open base
2SD1975A
VEBO
Emitter-base voltage
V
200
2SD1975
Collector-emitter voltage
UNIT
180
Open emitter
2SD1975A
VCEO
VALUE
V
200
Open collector
5
V
IC
Collector current
15
A
ICM
Collector current-peak
25
A
PC
Collector power dissipation
Ta=25℃
3.5
TC=25℃
150
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SD1975 2SD1975A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEsat
Collector-emitter saturation voltage
VBE
Emitter-base voltage
ICBO
Collector
cut-off current
2SD1975
2SD1975A
MIN
TYP.
MAX
UNIT
IC=10A ;IB=1A
2.5
V
IC=8A ; VCE=5V
1.8
V
50
μA
50
μA
VCB=180V; IE=0
VCB=200V; IE=0
IEBO
Emitter cut-off current
VEB=3V; IC=0
hFE-1
DC current gain
IC=20mA ; VCE=5V
20
hFE-2
DC current gain
IC=1A ; VCE=5V
60
hFE-3
DC current gain
IC=8A ; VCE=5V
20
Transition frequency
IC=0.5A ; VCE=5V
20
MHz
Collector output capacitance
f=1MHz;VCB=10V
200
pF
fT
COB
‹
CONDITIONS
hFE-2 classifications
Q
S
P
60-120
80-160
100-200
2
200
Inchange Semiconductor
Product Specification
2SD1975 2SD1975A
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)
3
Inchange Semiconductor
Product Specification
2SD1975 2SD1975A
Silicon NPN Power Transistors
4