JMnic Product Specification 2SB1160 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SD1715 ・High fT ・Satisfactory linearity of hFE ・Wide area of safe operation APPLICATIONS ・For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -9 A ICP Collector current-peak -15 A PC Collector power dissipation TC=25℃ 100 W 3 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ JMnic Product Specification 2SB1160 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBE CONDITIONS MAX UNIT IC=-7A ;IB=-0.7A -2.0 V Base-emitter on voltage IC=-7A ; VCE=-5V -1.8 V ICBO Collector cut-off current VCB=-150V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -50 μA hFE-1 DC current gain IC=-20mA ; VCE=-5V 20 hFE -2 DC current gain IC=-1A ; VCE=-5V 60 hFE -3 DC current gain IC=-7A ; VCE=-5V 20 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 330 pF fT Transition frequency IC=-0.5A ; VCE=-5V 20 MHz hFE-2 classifications Q S P 60-120 80-160 100-200 2 MIN TYP. 200 JMnic Product Specification 2SB1160 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3 JMnic Product Specification 2SB1160 Silicon PNP Power Transistors 4