SAVANTIC 2SB1054

SavantIC Semiconductor
Product Specification
2SB1054
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3PFa package
·Complement to type 2SD1485
·High transition frequency
·Wide area of safe operation
·
APPLICATIONS
·For high power amplifier applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-100
V
VCEO
Collector-emitter voltage
Open base
-100
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-5
A
ICP
Collector current-peak
-8
A
PC
Collector power dissipation
TC=25
60
Ta=25
3
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SB1054
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEsat
Collector-emitter saturation voltage
VBE
CONDITIONS
MAX
UNIT
IC=-3A ;IB=-0.3A
-2.0
V
Base-emitter on voltage
IC=-3A ; VCE=-5V
-1.8
V
ICBO
Collector cut-off current
VCB=-100V; IE=0
-50
µA
IEBO
Emitter cut-off current
VEB=-3V; IC=0
-50
µA
hFE-1
DC current gain
IC=-20mA ; VCE=-5V
20
hFE -2
DC current gain
IC=-1A ; VCE=-5V
40
hFE -3
DC current gain
IC=-3A ; VCE=-5V
20
COB
Output capacitance
IE=0 ; VCB=-10V;f=1MHz
170
pF
fT
Transition frequency
IC=-0.5A ; VCE=-5V
20
MHz
hFE-2 classifications
R
Q
P
40-80
60-120
100-200
2
MIN
TYP.
200
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
2SB1054