Inchange Semiconductor Product Specification 2SB1603 2SB1603A Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Low collector saturation voltage ・High speed switching APPLICATIONS ・For low-voltage switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol 导体 半 电 R O T UC Absolute maximum ratings (Ta=25℃) 固 SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS D N O IC 2SB1603 M E S GE Collector-base voltage N A H C IN Collector-emitter voltage Emitter-base voltage MAX -40 Open emitter 2SB1603A 2SB1603 V -50 -20 Open base 2SB1603A UNIT V -40 Open collector -5 V IC Collector current -4 A ICM Collector current-peak -8 A PC Collector dissipation Ta=25℃ 2 TC=25℃ 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB1603 2SB1603A Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SB1603 V(BR)CEO TYP. MAX UNIT -20 Collector-emitter breakdown voltage IC=-10mA ;IB=0 V 2SB1603A -40 VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.1A -0.5 V VBEsat Base-emitter saturation voltage IC=-2A ;IB=-0.1A -1.5 V ICBO Collector cut-off current VCB=-40V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -50 μA hFE-1 DC current gain IC=-0.1A ; VCE=-2V 45 hFE-2 DC current gain IC=-1A ; VCE=-2V 90 Transition frequency IC=-0.5A ; VCE=-5V fT 体 半导 固电 ton Turn-on time tstg Storage time IC=-2A; IB1=-IB2=-0.2A G N A CH IN tf Fall time hFE-2 Classifications Q P 90-180 130-260 2 R O T UC OND IC M E ES Switching times MIN 260 150 MHz 0.3 μs 0.4 μs 0.1 μs Inchange Semiconductor Product Specification 2SB1603 2SB1603A Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SB1603 2SB1603A Silicon PNP Power Transistors 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC 4