Inchange Semiconductor Product Specification 2SB941 2SB941A Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・Low collector saturation voltage ・Complementary to type 2SD1266/1266A APPLICATIONS ・For low-frequency power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol 导体 半 电 R O T UC Absolute maximum ratings(Ta=25℃) 固 SYMBOL VCBO PARAMETER CONDITIONS D N O IC 2SB941 M E S GE Collector-base voltage Open emitter 2SB941A VCEO VEBO N A H INC Collector-emitter voltage Emitter-base voltage 2SB941 VALUE -60 Open collector V -80 -60 Open base 2SB941A UNIT V -80 -5 V IC Collector current -3 A ICM Collector current-peak -5 A PC Collector power dissipation Ta=25℃ 2 TC=25℃ 35 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SB941 2SB941A Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER Collector-emitter voltage VCEO VCEsat CONDITIONS 2SB941 MIN TYP. MAX UNIT -60 IC=-30mA ,IB=0 V 2SB941A -80 Collector-emitter saturation voltage IC=-3A, IB=-0.375A -1.2 V VBE Base-emitter voltage IC=-3A ; VCE=-4V -1.8 V IEBO Emitter cut-off current VEB=-5V; IC=0 -1 mA ICEO Collector cut-off current -0.3 mA -0.2 mA Collector cut-off current ICES hFE-1 hFE-2 fT VCE=-30V; IB=0 2SB941A VCE=-60V; IB=0 2SB941 VCE=-60V; VBE=0 2SB941A VCE=-80V; VBE=0 体 半导 DC current gain IC=-1A ; VCE=-4V DC current gain IC=-3A ; VCE=-4V Transition frequency IC=0.5A; VCE=-10V,f=10MHz 固电 Switching times Turn-on time tstg Storage time tf IC=-1A IB1=-0.1A ,IB2=0.1A Fall time hFE-1 Classifications Q P 70-150 120-250 R O T UC 70 D N O IC M E S GE N A H INC ton 2SB941 2 250 10 30 MHz 0.5 μs 1.2 μs 0.3 μs Inchange Semiconductor Product Specification 2SB941 2SB941A Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 Inchange Semiconductor Product Specification 2SB941,2SB941A Silicon PNP Power Transistors 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC 4