Inchange Semiconductor Product Specification 2SB595 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD525 ・High breakdown voltage :VCEO=-100V ・Low collector saturation volage : VCE(sat)=-2.0V(Max) APPLICATIONS ・Power amplifier applications ・Recommend for 30W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -5 A IE Emitter current -5 A IB Base current -4 A PC Collectorl power dissipation 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB595 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 -100 V V(BR)EBO Emitter-base breakdown votage IE=-10mA; IC=0 -5 V Collector-emitter saturation voltage IC=-4A;IB=-0.4 A -2.0 V VBE Base-emitter on voltage IC=-4A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-100V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -1 mA hFE-1 DC current gain IC=-1A ; VCE=-5V 40 hFE-2 DC current gain IC=-4A ; VCE=-5V 20 fT Transition frequency IC=-1A ; VCE=-5V COB Output capacitance IE=0; VCB=-10V;f=1MHz VCEsat CONDITIONS hFE-1 classifications R O Y 40-80 70-140 120-240 2 MIN TYP. MAX UNIT 240 5 MHz 270 pF Inchange Semiconductor Product Specification 2SB595 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SB595 Silicon PNP Power Transistors 4