Inchange Semiconductor Product Specification 2SA1939 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3P(I) package ・Complement to type 2SC5196 APPLICATIONS ・Power amplifier applications ・Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-3P(I)) and symbol 导体 半 电 固 Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO CONDITIONS Emitter-base voltage VALUE UNIT -80 V Open base -80 V Open collector -5 V -6 A -0.6 A 60 W M E S E G N A CH IN D N O IC R O T UC Open emitter IC Collector current IB Base current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SA1939 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0 VCEsat Collector-emitter saturation voltage IC=-5 A;IB=-0.5A -2.0 V VBE Base-emitter voltage IC=-3A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-80V; IE=0 -5 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -5 μA hFE-1 DC current gain IC=-1A ; VCE=-5V 55 hFE-2 DC current gain IC=-3A ; VCE=-5V 35 fT COB CONDITIONS 导体 半 电 Transition frequency 固 Output capacitance R 55-110 N A H INC O 80-160 2 MAX UNIT V 160 30 MHz 180 pF R O T UC D N O IC IE=0; VCB=-10V;f=1MHz TYP. -80 IC=-1A ; VCE=-5V M E S GE hFE-1 classifications MIN Inchange Semiconductor Product Specification 2SA1939 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SA1939 Silicon PNP Power Transistors 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC 4