isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SB655 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -160V(Min) ·High Power Dissipation: PC= 100W(Max)@TC=25℃ ·Complement to Type 2SD675 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak -20 A PC Collector Power Dissipation @TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SB655 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A -2.5 V VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -120V; IE= 0 -0.1 mA hFE-1 DC Current Gain IC= -1A; VCE= -5V 60 hFE-2 DC Current Gain IC= -6A; VCE= -5V 20 Current-Gain—Bandwidth Product IC= -1A; VCE= -5V fT hFE Classifications B C 60-120 100-200 isc Website：www.iscsemi.cn CONDITIONS MIN TYP. MAX UNIT -160 V -5 V B 200 22 MHz