ISC 2SB655

isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistors
2SB655
DESCRIPTION
·Collector-Emitter Breakdown Voltage: V(BR)CEO= -160V(Min)
·High Power Dissipation: PC= 100W(Max)@TC=25℃
·Complement to Type 2SD675
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-160
V
VCEO
Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-12
A
ICM
Collector Current-Peak
-20
A
PC
Collector Power Dissipation
@TC=25℃
100
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistors
2SB655
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -50mA; RBE= ∞
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= -5mA; IC= 0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -6A; IB= -0.6A
-2.5
V
VBE(on)
Base-Emitter On Voltage
IC= -1A; VCE= -5V
-1.5
V
ICBO
Collector Cutoff Current
VCB= -120V; IE= 0
-0.1
mA
hFE-1
DC Current Gain
IC= -1A; VCE= -5V
60
hFE-2
DC Current Gain
IC= -6A; VCE= -5V
20
Current-Gain—Bandwidth Product
IC= -1A; VCE= -5V
fT
‹
hFE Classifications
B
C
60-120
100-200
isc Website:www.iscsemi.cn
CONDITIONS
MIN
TYP.
MAX
UNIT
-160
V
-5
V
B
200
22
MHz