isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD103 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V(Min) ·High Power Dissipation: PC= 25W(Max)@TC=25℃ Complement to Type 2SB503 APPLICATIONS ·Designed for audio power amplifier, power switching, DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s i . w PARAMETER w w VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage n c . i m e VALUE UNIT 80 V 50 V 10 V IC Collector Current-Continuous 3 A IE Emitter Current-Continuous -3 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ B isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SD103 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA; IB= 0 50 V V(BR)CBO Collector-Base Breakdown Voltage IC= 10mA; IE= 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 10 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A 1.5 V VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 5V 1.0 V ICBO Collector Cutoff Current VCB= 50V; IE= 0 20 μA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 200 μA hFE-1 DC Current Gain hFE-2 DC Current Gain fT COB CONDITIONS B n c . i m e s c is IC= 0.5A; VCE= 5V 30 IC= 2.5A; VCE= 5V 15 Current-Gain—Bandwidth Product IE= -0.5A; VCE= 10V Output Capacitance IE= 0; VCB= 10V; f= 1MHz isc Website：www.iscsemi.cn TYP. B w. w w MIN MAX UNIT 300 1 MHz 200 pF