isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB760 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD855 APPLICATIONS ·Medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A ICM Collector Current-Peak -2 A PC Collector Power Dissipation @ TC=25℃ 30 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB760 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.125A -1.0 V VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -4V -1.3 V ICEO Collector Cutoff Current VCE= -60V; IB= 0 -300 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -1 mA hFE-1 DC Current Gain IC= -0.2A; VCE= -4V 40 hFE-2 DC Current Gain IC= -1A; VCE= -4V 15 CONDITIONS Q P 40-90 70-150 120-250 isc Website：www.iscsemi.cn B 2 TYP. MAX -60 B hFE-1 Classifications R MIN UNIT V 250