isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1419 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -160V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Power amplifier applications ·Optimum for the output stage of a HiFi audio amplifier n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL s c s .i PARAMETER ww VALUE UNIT -160 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A ICM Collector Current-Peak -20 A Collector Power Dissipation @ TC=25℃ 120 w -160 PC TJ Tstg V W Collector Power Dissipation @ Ta=25℃ 3.5 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1419 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -8A; IB= -0.8A -1.8 V VBE(on) Base-Emitter On Voltage IC= -8A; VCE= -5V -1.8 V ICBO Collector Cutoff Current VCB= -160V; IE= 0 -50 μA IEBO Emitter Cutoff Current VEB= -3V; IC= 0 -50 μA hFE-1 DC Current Gain IC= -20mA; VCE= -5V hFE-2 DC Current Gain hFE-3 DC Current Gain w w Q S 60-120 80-160 n c . i m e 60 IC= -8A; VCE= -5V 20 100-200 isc Website：www.iscsemi.cn 2 MAX UNIT V 20 IC= -1A; VCE= -5V P TYP. -160 B s c s i . w hFE-2 Classifications MIN 200