ISC 2SC1617

Inchange Semiconductor
Product Specification
2SC1617
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-3 package
·High voltage: VCBO(min):300V
·Wide safe oprating area
APPLICATIONS
·For B/W white TV horizontal output
applications
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
300
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
7
A
IE
Emitter current
-7
A
PC
Collector power dissipation
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC1617
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA; IB=0
VCEsat
Collector-emitter saturation voltage
IC=5A;IB=0.5 A
1.2
V
VBEsat
Base-emitter saturation voltage
IC=5A;IB=0.5 A
1.5
V
ICBO
Collector cut-off current
VCB=250V; IE=0
1.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
mA
hFE-1
DC current gain
IC=1A ; VCE=5V
30
hFE-2
DC current gain
IC=7A ; VCE=5V
15
Transition frequency
IC=0.5A ; VCE=5V
fT
CONDITIONS
2
MIN
TYP.
MAX
100
UNIT
V
150
10
MHz
Inchange Semiconductor
Product Specification
2SC1617
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3