Inchange Semiconductor Product Specification 2SC1617 Silicon NPN Power Transistors · DESCRIPTION ·With TO-3 package ·High voltage: VCBO(min):300V ·Wide safe oprating area APPLICATIONS ·For B/W white TV horizontal output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 7 A IE Emitter current -7 A PC Collector power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC1617 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 VCEsat Collector-emitter saturation voltage IC=5A;IB=0.5 A 1.2 V VBEsat Base-emitter saturation voltage IC=5A;IB=0.5 A 1.5 V ICBO Collector cut-off current VCB=250V; IE=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE-1 DC current gain IC=1A ; VCE=5V 30 hFE-2 DC current gain IC=7A ; VCE=5V 15 Transition frequency IC=0.5A ; VCE=5V fT CONDITIONS 2 MIN TYP. MAX 100 UNIT V 150 10 MHz Inchange Semiconductor Product Specification 2SC1617 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3