ISC 2SC1568

Inchange Semiconductor
Product Specification
2SC1568
Silicon NPN Power Transistors
DESCRIPTION
·With TO-126 package
·Complement to type 2SA900
·Low collector saturation voltage
APPLICATIONS
·For low voltage type medium output
power amplification
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector
3
Base
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
18
V
VCEO
Collector-emitter voltage
Open base
18
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
1
A
ICM
Collector current-peak
2
A
PC
Collector power dissipation
1.2
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Ta=25℃
Inchange Semiconductor
Product Specification
2SC1568
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEsat
Collector-emitter saturation voltage
IC=1A ;IB=50m A
0.5
V
VBEsat
Base-emitter saturation voltage
IC=0.5A ;IB=50m A
1.2
V
V(BR)CBO
Collector-base breakdown voltage
IC=10μA;IE=0
18
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=1mA; IB=0
18
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10μA; IC=0
5
V
hFE-1
DC current gain
IC=500mA ; VCE=2V
90
hFE-2
DC current gain
IC=1.5A ; VCE=2V
50
ICBO
Collector cut-off current
VCB=10V ; IE=0
1
μA
ICEO
Collector cut-off current
VCE=18V ; IB=0
10
μA
COB
Output capacitance
IE=0; VCB=6V; f=1MHz
12
pF
fT
Transition frequency
IE=-50mA ;VCB=6V;f=200MHz
150
MHz
‹
B
hFE-1 classifications
Q
R
S
90-155
130-210
180-280
2
280
Inchange Semiconductor
Product Specification
2SC1568
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3
Inchange Semiconductor
Product Specification
2SC1568
Silicon NPN Power Transistors
4