Inchange Semiconductor Product Specification 2SB1335 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SD1855 ・Low collector saturation voltage APPLICATIONS ・For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector -emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -6 V -4 A 30 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SB1335 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; IB=0 -60 V V(BR)CBO Collector-base breakdown voltage IC=-50μA; IE=0 -80 V V(BR)EBO Collector-emitter breakdown voltage IE=-50μA; IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-3A ;IB=-0.3A -1.0 V VBEsat Base-emitter saturation voltage IC=-3A ;IB=-0.3A -1.5 V ICBO Collector cut-off current VCB=-80V; IE=0 -10 μA IEBO Emitter cut-off current VEB=-6V; IC=0 -10 μA hFE DC current gain IC=-1A ; VCE=-5V Transition frequency IC=-0.5A; VCE=-5V 12 MHz Collector output capacitance f=1MHz ; VCB=-10V 100 pF fT COB PARAMETER hFE Classifications D E F 60-120 100-200 160-320 2 60 320 Inchange Semiconductor Product Specification 2SB1335 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3