ISC 2SC1847

Inchange Semiconductor
Product Specification
2SC1847
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-126 package
・Complement to type 2SA886
・Low collector saturation
APPLICATIONS
・For medium output power amplification
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
导体
半
电
R
O
T
UC
Absolute Maximun Ratings (Ta=25℃)
固
SYMBOL
PARAMETER
VALUE
UNIT
50
V
40
V
5
V
Collector current (DC)
1.5
A
Collector current-peak
3
A
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
ICM
D
N
O
IC
Open emitter
M
E
S
GE
N
A
H
C
IN
CONDITIONS
Open base
Open collector
1.2*1
PC
Collector power dissipation
TC=25℃
W
5*2
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Note) *1: Without heat sink
*2: With a 100 × 100 × 2 mm A1 heat sink
Inchange Semiconductor
Product Specification
2SC1847
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=2mA;IB=0
40
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
50
V
VCEsat
Collector-emitter saturation voltage
IC=2A ;IB=0.2A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=2A ;IB=0.2A
1.5
V
ICBO
Collector cut-off current
VCB=20V; IE=0
1
μA
ICEO
Collector cut-off current
VCE=10V; IB=0
100
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE
DC current gain
IC=1A ; VCE=5V
Output capacitance
IE=0 ; VCB=20V;f=1MHz
COB
固电
fT
‹
体
半导
CONDITIONS
Transition frequency
Q
IN
80-160
IC=0.5A ; VCB=5V,f=200MHz
120-220
2
MAX
R
O
T
UC
OND
R
TYP.
80
IC
M
E
ES
G
N
A
CH
hFE Classifications
MIN
UNIT
220
35
pF
150
MHz
Inchange Semiconductor
Product Specification
2SC1847
Silicon NPN Power Transistors
PACKAGE OUTLINE
导体
半
电
固
D
N
O
IC
R
O
T
UC
M
E
S
GE
N
A
H
INC
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
2SC1847
Silicon NPN Power Transistors
4