ISC 2SA963

Inchange Semiconductor
Product Specification
2SA963
Silicon PNP Power Transistors
·
DESCRIPTION
·With TO-126 package
·Complement to type 2SC2209
·High collector power dissipation
APPLICATIONS
·For low-frequency power amplification
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute Maximun Ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-50
V
VCEO
Collector-emitter voltage
Open base
-40
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current (DC)
-1.5
A
ICM
Collector current-peak
-3
A
PC
Collector power dissipation
10
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SA963
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-2mA;IB=0
-40
V
V(BR)CBO
Collector-base breakdown voltage
IC=-1mA ;IE=0
-50
V
VCEsat
Collector-emitter saturation voltage
IC=-1.5A ;IB=-150mA
-1.0
V
VBEsat
Base-emitter saturation voltage
IC=-2A ;IB=-0.2A
-1.5
V
ICBO
Collector cut-off current
VCB=-20V; IE=0
-1
μA
ICEO
Collector cut-off current
VCE=-10V; IB=0
-100
μA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-10
μA
hFE
DC current gain
IC=-1A ; VCE=-5V
COB
Output capacitance
IE=0 ; VCB=-5V;f=1MHz
70
pF
fT
Transition frequency
IE=0.5A ; VCB=-5V,f=200MHz
150
MHz
‹
CONDITIONS
R
80-160
120-220
TYP.
B
hFE Classifications
Q
MIN
2
80
MAX
UNIT
220
Inchange Semiconductor
Product Specification
2SA963
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
2SA963
Silicon PNP Power Transistors
4