Inchange Semiconductor Product Specification 2SC2167 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High collector-emitter breakdown voltage : VCEO=150V(min) APPLICATIONS ·Power amplifier applications ·TV vertical deflection applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 2 A ICM Collector current-peak 3 A PC Collector power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2167 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 150 V V(BR)CBO Collector-base breakdown voltage IC=0.5mA ;IE=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=0.5mA ;IC=0 6 V Collector-emitter saturation voltage IC=0.5A ;IB=50m A 1.0 V ICBO Collector cut-off current VCB=150V;IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE DC current gain IC=0.1A ; VCE=5V Transition frequency IC=0.1A ; VCE=10V VCEsat fT CONDITIONS 2 MIN TYP. MAX UNIT 50 20 MHz Inchange Semiconductor Product Specification 2SC2167 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3