ISC 2SC2167

Inchange Semiconductor
Product Specification
2SC2167
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220 package
·High collector-emitter breakdown voltage
: VCEO=150V(min)
APPLICATIONS
·Power amplifier applications
·TV vertical deflection applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
150
V
VCEO
Collector-emitter voltage
Open base
150
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
2
A
ICM
Collector current-peak
3
A
PC
Collector power dissipation
30
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC2167
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=25mA ;IB=0
150
V
V(BR)CBO
Collector-base breakdown voltage
IC=0.5mA ;IE=0
150
V
V(BR)EBO
Emitter-base breakdown voltage
IE=0.5mA ;IC=0
6
V
Collector-emitter saturation voltage
IC=0.5A ;IB=50m A
1.0
V
ICBO
Collector cut-off current
VCB=150V;IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE
DC current gain
IC=0.1A ; VCE=5V
Transition frequency
IC=0.1A ; VCE=10V
VCEsat
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
50
20
MHz
Inchange Semiconductor
Product Specification
2SC2167
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3