Inchange Semiconductor Product Specification 2SA775 Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·High breakdown voltage APPLICATIONS ·For TV vertical output amplifier applicatons PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -4 V -0.7 A 12.5 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SA775 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,IB=0 -100 V V(BR)CBO Collector-base breakdown voltage IC=-10μA ,IE=0 -100 V V(BR)EBO Emitter-base breakdown voltage IE=-10μA ,IC=0 -4 V Collector-emitter saturation voltage IC=-500mA; IB=-50mA -1.0 V ICBO Collector cut-off current VCB=-100V; IE=0 -1.0 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -1.0 μA hFE DC current gain IC=-50mA ; VCE=-4V Transition frequency IC=-50mA ; VCE=-4V VCEsat fT CONDITIONS B MIN TYP. B 2 MAX UNIT 50 30 MHz Inchange Semiconductor Product Specification 2SA775 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3