Inchange Semiconductor Product Specification 2SD478 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SB568 APPLICATIONS ・Low frequency high voltage power amplifier TV vertical deflection output PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 2 A ICM Collector current-peak 5 A PC Collector power dissipation Ta=25℃ 1.8 TC=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -45~150 ℃ Inchange Semiconductor Product Specification 2SD478 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA; RBE=∞ V(BR)EBO Emitter-base breakdown votage IE=5mA; IC=0 Collector-emitter saturation voltage IC=0.5 A;IB=50m A 3.0 V VBE Base-emitter voltage IC=50mA ; VCE=4V 1.0 V ICBO Collector cut-off current VCB=120V; IE=0 1.0 μA IEBO Emitter cut-off current VEB=4V; IC=0 1.0 μA hFE-1 DC current gain IC=50mA ; VCE=4V 60 hFE-2 DC current gain IC=0.5A ; VCE=10V 60 VCEsat CONDITIONS hFE-1 classifications B C D 60-120 100-200 160-320 2 MIN TYP. MAX UNIT 150 V 6 V 320 Inchange Semiconductor Product Specification 2SD478 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3