Inchange Semiconductor Product Specification 2SC2928 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·For high voltage,high speed and high power switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 5 A ICM Collector current-peak 7 A IB Base current 2.5 A PC Collector power dissipation 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -45~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2928 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=0.2A ; RBE=∞ V(BR)EBO Emitter-base breakdown voltage IE=10mA ; IC=0 VCE(sat) Collector-emitter saturation voltage IC=1.5A; IB=0.3A 1.0 V VBE(sat) Base-emitter saturation voltage IC=1.5A; IB=0.3A 1.5 V ICBO Collector cut-off current VCB=1200V ;IE=0 100 μA ICEO Collector cut-off current VCE=650V ; RBE=∞ 100 μA hFE-1 DC current gain IC=0.5A ; VCE=5V 15 hFE-2 DC current gain IC=3A ; VCE=5V 7 1.0 μs 3.0 μs 1.0 μs 800 V 7 V Switching times ton Turn-on time ts Storage time tf Fall time IC=3.0A; VCC=250V IB1=0.6A ,IB2=-1.5A 2 Inchange Semiconductor Product Specification 2SC2928 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3