ISC 2SC2791

Inchange Semiconductor
Product Specification
2SC2791
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High collector breakdown voltage
·Excellent switching times
APPLICATIONS
·High speed and high voltage switching
·Switching regulator
·High speed DC-DC converter
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
900
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
5
A
IB
Base current
3
A
PC
Collector power dissipation
100
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC2791
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;IB=0
800
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
900
V
VCE(sat)
Collector-emitter saturation voltage
IC=3A; IB=0.6A
1.0
V
VBE(sat)
Base-emitter saturation voltage
IC=3A; IB=0.6A
1.5
V
ICBO
Collector cut-off current
VCB=800V; IE=0
100
μA
IEBO
Emitter cut-off current
VEB=7V; IC=0
1
mA
hFE-1
DC current gain
IC=10mA ; VCE=5V
10
hFE-2
DC current gain
IC=3A ; VCE=5V
10
1.0
μs
3.5
μs
1.0
μs
Switching times
tr
tstg
tf
Rise time
Storage time
VCC=400V ,IC=3A,
IB1=0.3A;IB2=-0.8A
Fall time
2
Inchange Semiconductor
Product Specification
2SC2791
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3