Inchange Semiconductor Product Specification 2SC2791 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High collector breakdown voltage ·Excellent switching times APPLICATIONS ·High speed and high voltage switching ·Switching regulator ·High speed DC-DC converter PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 5 A IB Base current 3 A PC Collector power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC2791 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 900 V VCE(sat) Collector-emitter saturation voltage IC=3A; IB=0.6A 1.0 V VBE(sat) Base-emitter saturation voltage IC=3A; IB=0.6A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 1 mA hFE-1 DC current gain IC=10mA ; VCE=5V 10 hFE-2 DC current gain IC=3A ; VCE=5V 10 1.0 μs 3.5 μs 1.0 μs Switching times tr tstg tf Rise time Storage time VCC=400V ,IC=3A, IB1=0.3A;IB2=-0.8A Fall time 2 Inchange Semiconductor Product Specification 2SC2791 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3