Inchange Semiconductor Product Specification 2SC3148 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High collector breakdown voltage: VCEO=800V(Min) ・Excellent switching time: tr=1.0μs(Max.) tf=1.0μs(Max.@IC=0.8A APPLICATIONS ・Switching regulator and high voltage switching applications ・High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 900 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 3 A ICM Collector current-peak 5 A IB Base current 1 A PC Collector dissipation Ta=25℃ 1.5 TC=25℃ 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC3148 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 900 V VCEsat Collector-emitter saturation voltage IC=0.8A; IB=0.16A 0.6 V VBEsat Base-emitter saturation voltage IC=0.8A; IB=0.16A 1.2 V ICBO Collector cut-off current VCB=800V ;IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 1 mA hFE DC current gain IC=0.8A ; VCE=5V 1.0 μs 4.0 μs 1.0 μs 10 Switching times tr tstg tf Rise time Storage time VCC≈400V; IC=0.8A IB1=0.08A;IB2=-0.20A; RL=50Ω;Duty cycle≤1% Fall time 2 Inchange Semiconductor Product Specification 2SC3148 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SC3148 Silicon NPN Power Transistors 4