Inchange Semiconductor Product Specification 2SC3310 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・High collector breakdown voltage ・Excellent Switching times APPLICATIONS ・Switching regulator ・High speed DC-DC converter ・High voltage switching PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 5 A ICM Collector current (pulse) 7 A IB Base current (DC) 1 A PC Collector power dissipation Ta=25℃ 2 TC=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC3310 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 500 V V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 400 V VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1A 1.5 V ICBO Collector cut-off current VCB=400V; IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 1 mA hFE-1 DC current gain IC=3A ; VCE=5V 12 hFE-2 DC current gain IC=5A ; VCE=5V 8 1.0 μs 2.5 μs 1.0 μs Switching times Tr Rise time ts Storage time tf Fall time IC=4A ;IB1=-IB2=0.4A VCC≈200V;RL=10Ω 2 Inchange Semiconductor Product Specification 2SC3310 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 Inchange Semiconductor Product Specification 2SC3310 Silicon NPN Power Transistors 4 Inchange Semiconductor Product Specification 2SC3310 Silicon NPN Power Transistors 5