Inchange Semiconductor Product Specification 2SC2555 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P(I) package ・High collector breakdown voltage VCEO=400V(Min) ・Excellent switching times : tr=1.0μs(Max.) tf=1.0μs(Max.)@ IC=4A APPLICATIONS ・Switching regulator and high voltage switching applications ・High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base R O T UC Fig.1 simplified outline (TO-3P(I)) and symbol 体 导 半 固电 EM S E NG Absolute maximum ratings(Ta=25℃) D N O IC VCEO A H C IN Collector-emitter voltage Open base VEBO Emitter-base voltage Open collector IC Collector current-DC 8 A ICM Collector current-peak 10 A IB Base current 4 A PC Collector power dissipation SYMBOL VCBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 500 V 400 V 7 V Ta=25℃ 2.5 TC=25℃ 80 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC2555 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector -emitter breakdown voltage IC=10mA ,IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ,IE=0 500 V VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A 1.0 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V ICBO Collector cut-off current VCB=400V; IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE-1 DC current gain IC=1A ; VCE=5V 15 hFE-2 DC current gain IC=4A ; VCE=5V 10 Switching times tr tstg tf 体 导 半 固电 Rise time CONDITIONS Storage time G N A CH Fall time IN 2 TYP. MAX R O T UC OND C I M E SE VCC≈200V; IC=4A IB1=-IB2=0.4A RL=50Ω MIN UNIT 1.0 μs 2.5 μs 1.0 μs Inchange Semiconductor Product Specification 2SC2555 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SC2555 Silicon NPN Power Transistors 体 导 半 固电 EM S E NG A H C IN 4 D N O IC R O T UC