Inchange Semiconductor Product Specification 2SC4157 Silicon NPN Power Transistors DESCRIPTION ・With TO-3P(I) package ・High VCEO ・High speed switching APPLICATIONS ・Switching regulator and high voltage switching applications ・High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 8 V IC Collector current-DC 10 A ICM Collector current-peak 20 A IB Base current 5 A PT Total power dissipation 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC4157 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ,IB=0 450 V V(BR)CBO Collector-base breakdown voltage IC=1mA ,IE=0 600 V VCEsat Collector-emitter saturation voltage IC=5A; IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=5A; IB=1A 2.0 V ICBO Collector cut-off current VCB=500V; IE=0 100 μA IEBO Emitter cut-off current VEB=8V; IC=0 1.0 mA hFE DC current gain IC=5A ; VCE=5V 0.5 μs 2.5 μs 0.5 μs 15 Switching times tr tstg tf Rise time Storage time VCC≈200V IB1=-IB2=0.5A ; RL=40Ω Fall time 2 Inchange Semiconductor Product Specification 2SC4157 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3