isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3357 DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz APPLICATIONS ·Designed for low noise amplifier at VHF, UHF and CATV band. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous 0.1 A PC Collector Power Dissipation @TC=25℃ 1.2 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3357 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL CONDITIONS MIN TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 10V; IE= 0 1.0 μA IEBO Emitter Cutoff Current VEB= 1V; IC= 0 1.0 μA hFE DC Current Gain IC= 20mA ; VCE= 10V Current-Gain—Bandwidth Product IC= 20mA ; VCE= 10V 6.5 Feed-Back Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz 0.65 Insertion Power Gain IC= 20mA ; VCE= 10V;f= 1.0GHz 9 dB NF Noise Figure IC= 7mA ; VCE= 10V;f= 1.0GHz 1.1 dB NF Noise Figure IC= 40mA ; VCE= 10V;f= 1.0GHz 1.8 fT Cre ︱S21e︱2 PARAMETER hFE Classification Marking RH RF RE hFE 50-100 80-160 125-250 isc Website：www.iscsemi.cn 2 50 300 GHz 1.0 3.0 pF dB INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn isc RF Product Specification 2SC3357 isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3357 S-PARAMETER VCE = 10 V, IC = 40 mA, ZO = 50Ω f (MHz) ︱S11︱ ∠S11 ︱S21︱ ∠S21 ︱S12︱ ∠S12 ︱S22︱ ∠S22 200 0.196 -94.4 13.023 102.4 0.043 74.5 0.444 -21.1 400 0.103 -118.3 6.852 89.2 0.081 77.4 0.398 -25.3 600 0.056 -131.1 4.632 78.3 0.118 77.5 0.399 -26.9 800 0.024 -43.7 3.527 75.9 0.152 78.0 0.414 -28.9 1000 0.008 -2.0 2.854 68.7 0.188 78.4 0.440 -33.5 1200 0.039 13.1 2.421 65.7 0.218 75.7 0.461 -33.3 1400 0.072 11.8 2.118 59.0 0.255 71.7 0.479 -36.3 1600 0.102 9.6 1.887 57.1 0.278 73.1 0.499 -35.5 1800 0.129 8.6 1.681 52.5 0.308 71.3 0.515 -38.8 2000 0.151 9.8 1.579 51.4 0.339 71.8 0.537 -35.9 isc Website：www.iscsemi.cn 4 isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3357 VCE = 10 V, IC = 20 mA, ZO = 50Ω f (MHz) ︱S11︱ ∠S11 ︱S21︱ ∠S21 ︱S12︱ ∠S12 ︱S22︱ ∠S22 200 0.130 -109.2 13.430 98.1 0.042 79.0 0.403 -22.1 400 0.073 -134.1 6.930 87.2 0.081 80.6 0.382 -24.7 600 0.037 -146.6 4.690 79.4 0.119 79.4 0.392 -25.6 800 0.010 177.1 3.560 75.2 0.154 79.7 0.412 -27.1 1000 0.024 23.7 2.878 68.2 0.191 76.5 0.440 -31.9 1200 0.056 17.2 2.439 65.4 0.220 76.8 0.463 -32.3 1400 0.093 13.8 2.133 59.0 0.257 72.9 0.483 -35.7 1600 0.124 12.0 1.898 57.3 0.280 74.0 0.504 -35.3 1800 0.151 11.0 1.693 52.9 0.311 72.4 0.519 -38.4 2000 0.174 13.4 1.591 52.0 0.341 72.8 0.542 -36.3 S-PARAMETER S11e, S22e-FREQUENCY CONDITION VCE = 10 V isc Website：www.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor S21e-FREQUENCY 2SC3357 CONDITION VCE = 10 V S12e-FREQUENCY IC = 20 mA isc Website：www.iscsemi.cn CONDITION VCE = 10 V IC = 20 mA 6