isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2954 DESCRIPTION ·Low Noise and High Gain NF = 2.3 dB TYP. ; ︱S21e︱2 = 20 dB TYP. @ f = 200 MHz NF = 2.4 dB TYP. ; ︱S21e︱2 = 12.5 dB TYP. @ f = 500 MHz APPLICATIONS ·Designed for low noise wide band amplifier and buffer amplifier of OSC, for VHF and CATV band. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 18 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous 0.15 A PC Collector Power Dissipation @TC=25℃ 2 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2954 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN ICBO Collector Cutoff Current VCB= 10V; IE= 0 hFE DC Current Gain IC= 50mA ; VCE= 10V 30 Current-Gain—Bandwidth Product IC= 50mA ; VCE= 10V 3.0 Feed-Back Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz Insertion Power Gain IC= 50mA ; VCE= 10V;f= 500MHz RG= 50Ω Noise Figure IC= 30mA ; VCE= 10V;f= 500MHz RG= 50Ω fT Cre 2 ︱S21e︱ NF isc Website：www.iscsemi.cn 2 TYP. UNIT 0.1 μA 200 4.0 1.1 10 MAX GHz 1.8 12.5 2.4 pF dB 4.0 dB INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn isc RF Product Specification 2SC2954 isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn 2SC2954 4 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn isc RF Product Specification 2SC2954