isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor BFR520 DESCRIPTION ·High Power Gain ·High Current Gain Bandwidth Product ·Low Noise Figure APPLICATIONS ·Designed for RF frontend in wideband applications in the GHz range,such as analog and digital cellular telephones, cordless. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCES Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 2.5 V IC Collector Current-Continuous 70 mA PC Collector Power Dissipation @TC=25℃ 0.3 W TJ Junction Temperature 175 ℃ -65~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor BFR520 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ICBO Collector Cutoff Current VCB= 6V; IE= 0 hFE DC Current Gain IC= 20mA ; VCE= 6V Current-Gain—Bandwidth Product IC= 20mA ; VCE= 6V; f= 1GHz COB Output Capacitance PG PG fT MIN TYP. 60 MAX UNIT 0.05 μA 250 9 GHz IE= 0 ; VCB= 6V; f= 1MHz 0.5 pF Power Gain IC= 20mA ; VCE= 6V; f= 900MHz 15 dB Power Gain IC= 20mA ; VCE= 6V; f= 2GHz 9 dB Insertion Power Gain IC= 20mA ; VCE= 6V; f= 900MHz 14 dB NF Noise Figure IC= 5mA ; VCE= 6V; f= 900MHz 1.1 1.6 dB NF Noise Figure IC= 20mA ; VCE= 6V; f= 900MHz 1.6 2.1 dB ︱S21e︱2 isc Website：www.iscsemi.cn 2 13 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn isc RF Product Specification BFR520 isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn BFR520 4 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn isc RF Product Specification BFR520 isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn BFR520 6 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn isc RF Product Specification BFR520