Inchange Semiconductor Product Specification 2SC3039 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High breakdown voltage (VCBO≥500V). ・Fast switching speed. ・Wide area of safe operation APPLICATIONS ・400V/7A switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 7 A ICM Collector current-peak 14 A IB Base current 3 A PC Collector dissipation Ta=25℃ 1.75 TC=25℃ 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃ Inchange Semiconductor Product Specification 2SC3039 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=∞ 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A 1.0 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V ICBO Collector cut-off current VCB=400V ;IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.8A ; VCE=5V 15 hFE-2 DC current gain IC=4A ; VCE=5V 8 Transition frequency IC=0.8A ; VCE=10V 20 MHz Collector output capacitance f=1MHz ; VCB=10V 80 pF fT Cob CONDITIONS MIN TYP. MAX UNIT 50 Switching times ton Turn-on time ts Storage time tf Fall time IC=5A, IB1=1A IB2=-1A; VCC=200V RL=40Ω hFE-1 classifications L M N 15-30 20-40 30-50 2 1.0 μs 2.5 μs 1.0 μs Inchange Semiconductor Product Specification 2SC3039 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SC3039 Silicon NPN Power Transistors 4