Inchange Semiconductor Product Specification KSC5027 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·High voltage and high reliability ·High speed switching ·Wide area of safe operation PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1100 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 3 A ICM Collector current-Peak 10 A IB Base current 1.5 A PC Collector dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification KSC5027 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;IB=0 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 1100 V V(BR)EBO Emitter-base breakdown voltage IE=1mA;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=1.5A ;IB=0.3A 2.0 V VBEsat Base-emitter saturation voltage IC=1.5A ;IB=0.3A 1.5 V ICBO Collector cut-off current VCB=800V ;IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.2A ; VCE=5V 10 hFE-2 DC current gain IC=1A ; VCE=5V 8 Transition frequency IC=0.2A ; VCE=10V 15 MHz Collector output capacitance f=1MHz ; VCB=10V 60 pF fT Cob CONDITIONS MIN TYP. MAX UNIT 40 Switching times ton Turn-on time ts Storage time tf Fall time IC=5 IB1=-2.5IB2=2A VCC=400V RL=200Ω hFE-1 Classifications N R O 10-20 15-30 20-40 2 0.5 μs 3.0 μs 0.3 μs Inchange Semiconductor Product Specification KSC5027 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification KSC5027 Silicon NPN Power Transistors 4