Inchange Semiconductor Product Specification 2SC4164 Silicon NPN Power Transistors · DESCRIPTION ·With TO-220C package ·High voltage ,high speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector; connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V 12 A 25 A 4 A IC Collector current ICM Collector current-Peak IB Base current PC Collector dissipation PW≤300μs,duty cycle≤10% Ta=25℃ 1.75 TC=25℃ 70 W Tj Junction temperature 150 ℃ Tstg Storage temperature -50~150 ℃ Inchange Semiconductor Product Specification 2SC4164 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=∞ 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=8A; IB=1.6A 0.8 V VBEsat Base-emitter saturation voltage IC=8A; IB=1.6A 1.5 V ICBO Collector cut-off current VCB=400V ;IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=1.6A; VCE=5V 15 hFE-2 DC current gain IC=8A; VCE=5V 10 hFE-3 DC current gain IC=10mA; VCE=5V 10 Transition frequency IC=1.6A ; VCE=10V 20 MHz Collector output capacitance f=1MHz ; VCB=10V 160 pF fT Cob CONDITIONS MIN TYP. MAX UNIT 50 Switching times ton Turn-on time ts Storage time tf Fall time IC=10A; IB1=2A IB2=-4A; VCC=200V RL=20Ω hFE-1 Classifications L M N 15-30 20-40 30-50 2 0.5 μs 2.5 μs 0.3 μs Inchange Semiconductor Product Specification 2SC4164 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 Inchange Semiconductor Product Specification 2SC4164 Silicon NPN Power Transistors 4