Inchange Semiconductor Product Specification 2SC4430 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High breakdown voltage, high reliability. ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·Switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1100 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 12 A ICM Collector current-peak 30 A IB Base current 6 A PC Collector power dissipation TC=25℃ 65 W 3 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC4430 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 1100 V V(BR)CEO Collector-emitter breakdown voltage IC=5mA; RBE=∞ 800 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=6A;IB=1.2A 2.0 V VBEsat Base-emitter saturation voltage IC=6A;IB=1.2A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.8A ; VCE=5V 10 hFE-2 DC current gain IC=4A ; VCE=5V 8 fT Transition frequency IC=0.8A ; VCE=10V 15 MHz COB Output capacitance VCB=10V;f=1MHz 215 pF 40 Switching times ton Turn-on time tstg Storage time tf IC=8A;RL=50Ω IB1=1.6A;- IB2=3.2A VCC=400V Fall time hFE-1 classifications K L M 10-20 15-30 20-40 2 0.5 μs 3.0 μs 0.3 μs Inchange Semiconductor Product Specification 2SC4430 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SC4430 Silicon NPN Power Transistors 4