ISC 2SC4430

Inchange Semiconductor
Product Specification
2SC4430
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PML package
·High breakdown voltage, high reliability.
·Fast switching speed.
·Wide area of safe operation
APPLICATIONS
·Switching regulator applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1100
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
12
A
ICM
Collector current-peak
30
A
IB
Base current
6
A
PC
Collector power dissipation
TC=25℃
65
W
3
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SC4430
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CBO
Collector-base breakdown voltage
IC=1mA; IE=0
1100
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA; RBE=∞
800
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA; IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=6A;IB=1.2A
2.0
V
VBEsat
Base-emitter saturation voltage
IC=6A;IB=1.2A
1.5
V
ICBO
Collector cut-off current
VCB=800V; IE=0
10
μA
IEBO
Emitter cut-off current
VEB=5V; IC=0
10
μA
hFE-1
DC current gain
IC=0.8A ; VCE=5V
10
hFE-2
DC current gain
IC=4A ; VCE=5V
8
fT
Transition frequency
IC=0.8A ; VCE=10V
15
MHz
COB
Output capacitance
VCB=10V;f=1MHz
215
pF
40
Switching times
ton
Turn-on time
tstg
Storage time
tf
‹
IC=8A;RL=50Ω
IB1=1.6A;- IB2=3.2A
VCC=400V
Fall time
hFE-1 classifications
K
L
M
10-20
15-30
20-40
2
0.5
μs
3.0
μs
0.3
μs
Inchange Semiconductor
Product Specification
2SC4430
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
2SC4430
Silicon NPN Power Transistors
4