Inchange Semiconductor Product Specification 2SC4424 Silicon NPN Power Transistors · DESCRIPTION ·With TO-3PML package ·High breakdown voltage, high reliability. ·Fast switching speed. ·Wide ASO. APPLICATIONS ·Switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 16 A ICM Collector current-peak 32 A IB Base current 6 A PC Collector power dissipation TC=25℃ 60 Ta=25℃ 3 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC4424 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 500 V V(BR)CEO Collector-emitter breakdown voltage IC=10mA; RBE=∞ 400 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 7 V VCEX(SUS) Collector-emitter sustaining voltage IC=8A;IB1=0.8A; IB2=-3.2A;L=200μH 400 V VCEsat Collector-emitter saturation voltage IC=10A;IB=2A 0.8 V VBEsat Base-emitter saturation voltage IC=10A;IB=2A 1.5 V ICBO Collector cut-off current VCB=400V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=2A ; VCE=5V 15 hFE-2 DC current gain IC=10A ; VCE=5V 10 hFE-3 DC current gain IC=10mA ; VCE=5V 10 fT Transition frequency IC=2A ; VCE=10V 20 MHz COB Output capacitance VCB=10V;f=1MHz 230 pF 50 Switching times ton tstg tf Turn-on time IC=12A;RL=16.6Ω IB1=2.4A;- IB2=4.8A VCC=200V Storage time Fall time hFE-1 classifications L M N 15-30 20-40 30-50 2 0.5 μs 2.5 μs 0.3 μs Inchange Semiconductor Product Specification 2SC4424 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SC4424 Silicon NPN Power Transistors 4