ISC 2SA1186

isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
2SA1186
DESCRIPTION
·High Collector-Emitter Breakdown VoltageV(BR)CEO= -150V(Min)
·Good Linearity of hFE
·Complement to Type 2SC2837
APPLICATIONS
·For audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-150
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
IB
Base Current-Continuous
-2
A
PC
Collector Power Dissipation
@ TC=25℃
100
W
TJ
Junction Temperature
150
℃
-55~150
℃
B
Tstg
Storage Temperature Range
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
2SA1186
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -25mA ; IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -5.0A; IB= -0.5A
-2.0
V
ICBO
Collector Cutoff Current
VCB= -150V ; IE=0
-100
μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC=0
-100
μA
hFE
DC Current Gain
IC= -3A ; VCE= -4V
COB
Output Capacitance
IE= 0 ; VCB= -80V;f= 1.0MHz
110
pF
Current-Gain—Bandwidth Product
IE= 1A ; VCE= -12V
60
MHz
0.25
μs
0.8
μs
0.2
μs
fT
CONDITIONS
MIN
TYP.
MAX
-150
UNIT
V
B
50
180
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
IC= -5A ,RL= 12Ω,
IB1= -IB2= -0.5A,VCC= -60V
Fall Time
‹ hFE Classifications
O:50-80
O50
O60
O70
50-60
60-70
70-80
P80
P90
P100
P110
P120
80-90
90-100
100-110
110-120
120-130
Y130
Y140
Y150
Y160
Y170
130-140
140-150
150-160
160-170
170-180
P:80-130
Y:130-180
isc Website:www.iscsemi.cn
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