isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1494 DESCRIPTION ·Collector-Emitter Breakdown VoltageV(BR)CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3858 APPLICATIONS ·For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -17 A IB Base Current-Continuous -5 A PC Collector Power Dissipation @ TC=25℃ 200 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1494 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A -2.5 V ICBO Collector Cutoff Current VCB= -200V ; IE= 0 -100 μA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -100 μA hFE DC Current Gain IC= -8A ; VCE= -4V COB Output Capacitance IE= 0 ; VCB= -10V;ftest= 1.0MHz 500 pF Current-Gain—Bandwidth Product IE= 1A ; VCE= -12V 20 MHz 0.6 μs 0.9 μs 0.2 μs fT CONDITIONS MIN TYP. MAX -200 UNIT V 50 180 Switching times ton Turn-on Time tstg Storage Time tf IC= -10A ,RL= 4Ω, IB1= -IB2= -1A,VCC= -40V Fall Time hFE Classifications Y P G 50-100 70-140 90-180 isc Website：www.iscsemi.cn 2