Inchange Semiconductor Product Specification 2SC4054 Silicon NPN Power Transistors DESCRIPTION ・With ITO-220 package ・Switching power transistor ・High voltage ,high speed PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS VALUE UNIT 600 V 450 V 7 V 5 A Collector current-Peak 10 A 体 导 半 Collector-base voltage 固电 Open emitter Collector-emitter voltage Open base EM S E NG Emitter-base voltage Open collector D N O IC R O T UC IB A H C IN Base current 2 A IBM Base current-Peak 4 A PT Total power dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ MAX UNIT 4.16 ℃/W IC ICM Collector current TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case Inchange Semiconductor Product Specification 2SC4054 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage IC=2.5A; IB=0.5A 1.5 V At rated volatge 0.1 mA 0.1 mA ICBO 450 UNIT Collector cut-off current ICEO Collector cut-off current IEBO Emitter cut-off current At rated volatge hFE-1 DC current gain IC=2.5A ; VCE=5V 10 hFE-2 DC current gain IC=1mA ; VCE=5V 5 fT ts tf 体 导 半 Transition frequency 固电 Switching times ton V EM S E NG A H C IN Turn-on time Storage time IC=2.5A;IB1=0.5A IB2=1A ,RL=60Ω VBB2=4V Fall time 2 R O T UC D N O IC IC=0.5A ; VCE=10V 20 MHz 0.5 μs 2.0 μs 0.2 μs Inchange Semiconductor Product Specification 2SC4054 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3 Inchange Semiconductor Product Specification 2SC4054 Silicon NPN Power Transistors 体 导 半 固电 EM S E NG A H C IN 4 D N O IC R O T UC