ISC 2SC5198

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2SC5198
DESCRIPTION
·Low Collector Saturation Voltage: VCE(sat)= 2.0V(Min) @IC= 7A
·Good Linearity of hFE
·Complement to Type 2SA1941
APPLICATIONS
·Power amplifier applications
·Recommend for 70W high fidelity audio frequency
amplifier output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
140
V
VCEO
Collector-Emitter Voltage
140
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
1
A
PC
Collector Power Dissipation
@ TC=25℃
100
W
TJ
Junction Temperature
150
℃
-55~150
℃
B
Tstg
Storage Temperature Range
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2SC5198
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 50mA ; IB= 0
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 7A; IB= 0.7A
2.0
V
VBE(on)
Base-Emitter On Voltage
IC= 5A ; VCE= 5V
1.5
V
ICBO
Collector Cutoff Current
VCB= 140V ; IE=0
5
μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
5
μA
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
55
hFE-2
DC Current Gain
IC= 5A ; VCE= 5V
35
COB
Output Capacitance
IE=0 ; VCB= 10V;ftest= 1.0MHz
170
pF
Current-Gain—Bandwidth Product
IC= 1A ; VCE= 5V
30
MHz
fT
‹
CONDITIONS
MIN
R55
R65
R75
R85
55-65
65-75
75-85
85-95
O95
O105
O115
O125
O135
O145
O155
95-105
105-115
115125
125-135
135-145
145-155
155-160
UNIT
V
B
2
MAX
140
hFE-1 Classifications
isc Website:www.iscsemi.cn
TYP.
160
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Website:www.iscsemi.cn
isc Product Specification
2SC5198