isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5198 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)= 2.0V(Min) @IC= 7A ·Good Linearity of hFE ·Complement to Type 2SA1941 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @ TC=25℃ 100 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5198 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 0.7A 2.0 V VBE(on) Base-Emitter On Voltage IC= 5A ; VCE= 5V 1.5 V ICBO Collector Cutoff Current VCB= 140V ; IE=0 5 μA IEBO Emitter Cutoff Current VEB= 5V; IC=0 5 μA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 55 hFE-2 DC Current Gain IC= 5A ; VCE= 5V 35 COB Output Capacitance IE=0 ; VCB= 10V;ftest= 1.0MHz 170 pF Current-Gain—Bandwidth Product IC= 1A ; VCE= 5V 30 MHz fT CONDITIONS MIN R55 R65 R75 R85 55-65 65-75 75-85 85-95 O95 O105 O115 O125 O135 O145 O155 95-105 105-115 115125 125-135 135-145 145-155 155-160 UNIT V B 2 MAX 140 hFE-1 Classifications isc Website：www.iscsemi.cn TYP. 160 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Website：www.iscsemi.cn isc Product Specification 2SC5198