isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5200 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 230V(Min) ·Complement to Type 2SA1943 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous 1.5 A PC Collector Power Dissipation @ TC=25℃ 150 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5200 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL CONDITIONS MIN TYP. MAX Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 8.0A; IB= 0.8A 3.0 V VBE(on) Base-Emitter On Voltage IC= 7A ; VCE= -5V 1.5 V ICBO Collector Cutoff Current VCB= 230V ; IE=0 5 μA IEBO Emitter Cutoff Current VEB= 5V; IC=0 5 μA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 55 hFE-2 DC Current Gain IC= 7A ; VCE= 5V 35 COB Output Capacitance IE=0 ; VCB= 10V;ftest= 1.0MHz 200 pF Current-Gain—Bandwidth Product IC= 1A ; VCE= 5V 30 MHz hFE-1 Classifications R O 55-110 80-160 isc Website：www.iscsemi.cn 2 230 UNIT V(BR)CEO fT PARAMETER V 160 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Website：www.iscsemi.cn isc Product Specification 2SC5200