isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3421 DESCRIPTION ·High Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min) ·Complement to Type 2SA1358 APPLICATIONS ·Designed for audio frequency power amplifier applications. ·Suitable for driver of 60 to 80 Watts audio amplifier. n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE s c s i . w w w 120 V 120 V 5 V 1 A A IC Collector Current-Continuous IB Base Current-Continuous 0.1 Collector Power Dissipation @ TC=25℃ 10 B W PC TJ Tstg UNIT Collector Power Dissipation @ Ta=25℃ 1.5 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3421 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA 1.0 V VBE(on) Base-Emitter On Voltage IC= 500mA ; VCE= 5V 1.0 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.1 μA hFE DC Current Gain fT COB w hFE Classifications O Y 80-160 120-240 s c s .i ww isc Website：www.iscsemi.cn MIN n c . i m e IC= 0.1A ; VCE= 5V Current-Gain—Bandwidth Product Output Capacitance CONDITIONS TYP. 80 MAX UNIT 240 IC= 0.1A ; VCE= 5V 120 MHz IE= 0; VCB= 10V, ftest= 1MHz 15 pF 2