isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5885 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·Wide Area of Safe Operation ·Built-in Damper Diode APPLICATIONS ·Horizontal deflection output for TV, CRT monitor applicaitions. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector-Emitter Voltage 1500 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 6 A IB Base Current- Continuous 3 A ICP Collector Current-Pulse 9 A Collector Power Dissipation @ Ta=25℃ 2 B PC TJ Tstg W Collector Power Dissipation @ TC=25℃ 30 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5885 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.75A 2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.75A 1.5 V ICBO Collector Cutoff Current VCB= 1000V; IE= 0 VCB= 1500V; IE= 0 50 1.0 μA mA hFE DC Current Gain IC= 3A; VCE= 5V VECF C-E Diode Forward Voltage IF= 3A Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V; f= 0.5MHz fT 5 UNIT V B B 5 10 2.0 3 V MHz Switching times; Resistive load tstg Storage Time 5.0 μs 0.5 μs IC= 3A, IB1= 0.75A; IB2= -1.5A tf Fall Time isc Website：www.iscsemi.cn 2