isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4428 DESCRIPTION ·High Breakdown Voltage: V(BR)CEO= 800V(Min) ·Fast Switching speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator Applications n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER s c s .i VALUE ww VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w UNIT 1100 V 800 V 7 V IC Collector Current-Continuous 6 A ICP Collector Current-Pulse 20 A IB Base Current-Continuous 3 A Collector Power Dissipation @ TC=25℃ 55 B PC W Collector Power Dissipation @ Ta=25℃ TJ Tstg Junction Temperature Storage Temperature Range isc Website：www.iscsemi.cn 3 150 ℃ -55~150 ℃ isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4428 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage V(BR)EBO MIN TYP. MAX UNIT 800 V IC= 1mA; IE= 0 1100 V Emitter-Base Breakdown Voltage IE= 1mA; IC=0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current Gain hFE-2 DC Current Gain COB Output Capacitance fT Current-Gain—Bandwidth Product ton Turn-on Time tstg Storage Time tf B B n c . i m e s c s i . w w w Switching times CONDITIONS IC= 0.4A; VCE= 5V 10 IC= 2A; VCE= 5V 8 IE= 0; VCB= 10V; ftest=1.0MHz 120 pF IC= 0.4A; VCE= 10V 15 MHz IC= 4A; IB1= 0.8A; IB2= -1.6A; RL= 100Ω; VCC= 400V Fall Time hFE-1 Classifications K L M 10-20 15-30 20-40 isc Website：www.iscsemi.cn 40 2 0.5 μs 3.0 μs 0.3 μs