ISC 2SD1186

Inchange Semiconductor
Product Specification
2SD1185
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3 package
・High breakdown voltage
・High speed switching
APPLICATIONS
・Power switching applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1200
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
5
A
ICM
Collector current-peak
7
A
PC
Collector power dissipation
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-45~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD1185
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA ;IC=0
6
V
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;RBE=∞
800
V
VCEsat
Collector-emitter saturation voltage
IC=4A; IB=0.8A
5.0
V
VBEsat
Base-emitter saturation voltage
IC=4A; IB=0.8A
1.5
V
ICES
Collector cut-off current
VCE=1200V; RBE=0
0.5
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
0.1
mA
hFE
DC current gain
IC=0.3A ; VCE=5V
10
30
Switching times
tf
Fall time
1.0
μs
IC=4A ;IB1=0.8A; IB2=-2A
ts
Storage time
1.0
2
μs
Inchange Semiconductor
Product Specification
2SD1185
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3