Inchange Semiconductor Product Specification 2SD1185 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High breakdown voltage ・High speed switching APPLICATIONS ・Power switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 1200 V Collector-emitter voltage Open base 800 V Emitter-base voltage Open collector 6 V IC Collector current 5 A ICM Collector current-peak 7 A PC Collector power dissipation 50 W Tj Junction temperature 150 ℃ Tstg Storage temperature -45~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SD1185 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=10mA ;IC=0 V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=∞ VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A 5.0 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V ICES Collector cut-off current VCE=1200V; RBE=0 0.5 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE 6 V 800 V R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH DC current gain IC=0.3A ; VCE=5V 10 30 Switching times tf Fall time 1.0 μs IC=4A ;IB1=0.8A; IB2=-2A ts Storage time 1.0 2 μs Inchange Semiconductor Product Specification 2SD1185 Silicon NPN Power Transistors PACKAGE OUTLINE R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3