ISC 2SD1168

Inchange Semiconductor
Product Specification
2SD1168
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
·Wide area of safe operation
APPLICATIONS
·For switching regulator applications
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
5
A
ICM
Collector current-peak
10
A
PC
Collector power dissipation
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-65~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SD1168
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCER(SUS)
Collector-emitter sustaining voltage
IC=5A; RBE=10Ω;L=2mH
V(BR)EBO
Emitter-base breakdown votage
IE=1mA; IC=0
VCEsat
Collector-emitter saturation voltage
IC=2 A;IB=1A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=2 A;IB=1A
1.5
V
VCB=750V; IE=0
0.1
ICBO
CONDITIONS
MIN
TYP.
V
5
V
Collector cut-off current
tf
DC current gain
UNIT
800
mA
VCB=1500V; IE=0
hFE
MAX
IC=1A ; VCE=4V
1.0
9
25
Fall time
0.5
μs
IC=1.5 A; IB1=0.2A; IB2=-0.7A
ts
‹
Storage time
2
hFE Classifications
Q
P
9-18
15-25
2
μs
Inchange Semiconductor
Product Specification
2SD1168
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3