Inchange Semiconductor Product Specification 2SD792 Silicon NPN Power Transistors · DESCRIPTION ·With TO-3 package ·High voltage ·Wide area of safe operation APPLICATIONS ·For line-operated horizontal deflection output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 4 V IC Collector current 5 A ICM Collector current-peak 7 A PT Total power dissipation 35 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=90℃ Inchange Semiconductor Product Specification 2SD792 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) V(BR)EBO Collector-emitter sustaining voltage IC=0.1A; IB=0;L=25mH 700 V Emitter-base breakdown votage IE=10mA; IC=0 4 V VCEsat Collector-emitter saturation voltage IC=4.5 A;IB=2 A 1.5 V VBEsat Base-emitter saturation voltage IC=4.5 A;IB=2 A 1.5 V VCB=750V;IE=0 50 μA VCB=1500V;IE=0 1.0 mA 0.1 mA ICBO MAX UNIT Collector cut-off current IEBO Emitter cut-off current VEB=4V; IC=0 hFE DC current gain IC=4A ; VCE=10V tf TYP. 4 12 Fall time 0.7 μs IC=4A; IBend=1.8A; LB=10μH tstg Storage time 13 2 μs Inchange Semiconductor Product Specification 2SD792 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3