Inchange Semiconductor Product Specification 2SC3277 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High voltage ,high current ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·400V/10A switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A ICM Collector current-peak 20 A PC Collector power dissipation 90 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC3277 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=∞ 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.2A 1.0 V VBEsat Base-emitter saturation voltage IC=6A ;IB=1.2A 1.5 V ICBO Collector cut-off current VCB=400V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=1.2A ; VCE=5V 15 hFE-2 DC current gain IC=6A ; VCE=5V 8 fT Transition frequency IC=1.2A ; VCE=10V 20 MHz COB Output capacitance IE=0 ; VCB=10V;f=1MHz 120 pF 50 Switching times ton Turn-on time tstg Storage time tf IC=7A;IB1=-IB2=1.4A RL=28.6Ω,PW=20μs VCC=200V Fall time hFE-1 Classifications L M N 15-30 20-40 30-50 2 1.0 μs 2.5 μs 1.0 μs Inchange Semiconductor Product Specification 2SC3277 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 Inchange Semiconductor Product Specification 2SC3277 Silicon NPN Power Transistors 4