ISC 2SC1871A

Inchange Semiconductor
Product Specification
2SC1868
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Wide area of safe operation
·High voltage ,high speed
APPLICATIONS
·For switching regulator application
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
450
V
VCEO
Collector-emitter voltage
Open base
400
V
VEBO
Emitter-base voltage
Open collector
7
V
7
A
80
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
TC=25℃
Inchange Semiconductor
Product Specification
2SC1868
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;IB=0
400
V
V(BR)CBO
Collector-base breakdown voltage
IC=1mA ;IE=0
450
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=4A; IB=0.8A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=4A; IB=0.8A
1.5
V
ICBO
Collector cut-off current
VCB=450V; IE=0
100
μA
IEBO
Emitter cut-off current
VEB=7V; IC=0
100
μA
hFE-1
DC current gain
IC=1A ; VCE=5V
15
hFE-2
DC current gain
IC=5A ; VCE=5V
10
2
MIN
TYP.
MAX
50
UNIT
Inchange Semiconductor
Product Specification
2SC1868
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3