Inchange Semiconductor Product Specification 2SC1868 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Wide area of safe operation ·High voltage ,high speed APPLICATIONS ·For switching regulator application PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 450 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V 7 A 80 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC1868 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 450 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A 1.0 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V ICBO Collector cut-off current VCB=450V; IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 100 μA hFE-1 DC current gain IC=1A ; VCE=5V 15 hFE-2 DC current gain IC=5A ; VCE=5V 10 2 MIN TYP. MAX 50 UNIT Inchange Semiconductor Product Specification 2SC1868 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3