Inchange Semiconductor Product Specification 2SD1194 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SB884 ・High DC current gain. ・High current capacity and wide ASO. ・Low saturation voltage ・DARLINGTON APPLICATIONS ・Motor drivers, printer hammer drivers, relay drivers,voltage regulator control. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 110 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 3 A ICM Collector current-peak 5 A PC Collector power dissipation Ta=25℃ 1.75 TC=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1194 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=5mA ; IE=0 110 V V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;RBE=∞ 100 V VCEsat Collector-emitter saturation voltage IC=1.5A, IB=3mA VBEsat Base-emitter saturation voltage ICBO 1.5 V IC=1.5A, IB=3mA 2.0 V Collector cut-offcurrent VCB=80V;IE=0 0.1 mA IEBO Emitter cut-offcurrent VEB=5V;IC=0 3.0 mA hFE DC current gain IC=1.5A ; VCE=3V Transition frequency IC=1.5A ; VCE=5V fT 0.9 1500 20 MHz 0.7 μs 5.0 μs 1.2 μs Switching times ton Turn-on time tstg Storage time tf IC=500IB1=-500IB2=1A VCC=50V;RL=50Ω Fall time 2 Inchange Semiconductor Product Specification 2SD1194 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3