Inchange Semiconductor Product Specification 2SB887 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・High DC current gain. ・Large current capacity and wide ASO. ・Low saturation voltage. ・DARLINGTON APPLICATIONS ・Motor drivers, printer ・Hammer drivers ・Relay drivers, ・Voltage regulator control PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 体 半导 固电 Emitter D N O IC M E S GE Absolute maximum ratings(Tc=25℃) SYMBOL N A H INC VALUE UNIT Open emitter -110 V Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -6 V IC Collector current (DC) -10 A ICM Collector current-peak -15 A PC Collector power dissipation 70 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ VCBO VCEO PARAMETER R O T UC Fig.1 simplified outline (TO-3PN) and symbol Collector-base voltage CONDITIONS TC=25℃ Inchange Semiconductor Product Specification 2SB887 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;RBE=∞ -100 V V(BR)CBO Collector-base breakdown voltage IC=-5mA ;IE=0 -110 V VCEsat Collector-emitter saturation voltage IC=-5A; IB=-10mA VBEsat Base-emitter saturation voltage ICBO UNIT -1.5 V IC=-5A; IB=-10mA -2.0 V Collector cut-off current VCB=-80V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -3.0 mA hFE DC current gain fT 导体 半 电 固 Transition frequency IC=-5A ; VCE=-3V IC=-5A ; VCE=-5V -1.0 MAX 1500 R O T UC D N O IC M E S GE N A H INC 2 4000 20 MHz Inchange Semiconductor Product Specification 2SB887 Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 D N O IC R O T UC M E S GE N A H INC Fig.2 outline dimensions 3