isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V ·Complement to Type 2SB1021 APPLICATIONS ·Hammer driver,pulse motor drive applications. ·High power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Base Current-Continuous 0.2 A PC Collector Power Dissipation @ TC=25℃ 30 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn 2SD1416 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1416 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 14mA 2.0 V Base-Emitter Saturation Voltage IC= 3A; IB= 6mA 2.5 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3.0 mA hFE -1 DC Current Gain IC= 3A; VCE= 3V 2000 hFE -2 DC Current Gain IC= 7A; VCE= 3V 1000 VBE(sat) CONDITIONS MIN TYP. MAX 80 UNIT V B B B 15000 Switching times ton Turn-on Time tstg Storage Time tf IB1= -IB2= 6mA RL= 15Ω; VCC= 45V PW=20μs; Duty Cycle≤1% Fall Time isc Website：www.iscsemi.cn 2 0.8 μs 3.0 μs 2.5 μs